Fast MTF measurement of CMOS imagers at the chip level using ISO 12233 slanted-edge methodology

MTF measurement methods for imaging devices usually require the use of an optical system to project the image of the object onto the detector. So, MTF results quality strongly depends on the accuracy of the optical adjustments (alignments, focusing…). Dedicated edge patterns have been implemented at the chip level on a CMOS imager. One of them emulates the target used in the ISO 12233 slanted-edge technique and the others one are inspired by the knife-edge method. This allows to get the MTF data without optical focusing. In order to validate the results, comparisons have been made between MTF measurements using these patterns and results obtained through direct measurements with the transmissive slanted-edge target and sine target

Pixel Crosstalk and Correlation with Modulation Transfer Function of CMOS Image Sensor

The Modulation Transfer Function is a common metric used to quantify image quality but inter-pixel crosstalk analysis is also of interest. Because of an important number of parameters influencing MTF, its analytical calculation and crosstalk predetermination are not an easy task for a CMOS image sensor. A dedicated test chip (using a technology optimized for imaging applications) has been developed in order to get both MTF data and influence of the various areas of the pixel to its own response and the one of its neighbors. In order to evaluate the contribution of pixel elementary patterns (particularly the in-pixel readout circuitry), several kernels of shielded pixels have been implemented with the central pixel locally unmasked. The results obtained with pixel kernels and direct MTF measurements, performed on the same chip at different wavelengths, are analyzed and compared in order to correlate them and draw conclusions that can be applied at the design level. Additional data resulting from spotscan measurements allow us to verify our hypothesis on different pixels

CMOS pixels crosstalk mapping and its influence on measurements accuracy for space applications

Due to different local intra-pixel sensitivity and crosstalk between neighboring pixels, the Pixel Response Function of detectors (PRF - signal of the pixel as a function of a point source position) is generally non-uniform. This may causes problems in space application such as aperture photometry and astrometry (centroiding). For imaging applications, an important crosstalk yields to a loss of resolution, i.e. a poor image quality, commonly quantified by the Modulation Transfer Function (MTF). So, crosstalk study is of primary importance for our applications. A dedicated test chip (using a technology optimized for imaging applications) has been developed in order to get both MTF data and influence of the various areas of the pixel to its own response and the one of its neighbors. The results obtained with pixel kernels and direct MTF measurements, performed on the same chip at different wavelengths, are analyzed and compared in order to correlate them. So it is possible to draw conclusions -that can be applied at the design level - allowing to get a better MTF and to minimize errors on aperture photometry and centroiding computation

Fast MTF measurement of CMOS imagers using ISO 12233 slanted-edge methodology

The ISO 12233 standard provides a fast and efficient way of measuring Modulation Transfer Function (MTF) of digital input devices (such a digital still camera) using a normalized reflective target based on a slanted-edge method. A similar methodology has been applied for measuring MTF of CMOS image sensors, using 12233 slanted-edge technique associated with a prototype transmissive target. In order to validate the results, comparisons have been made between MTF measurements of image sensor implemented using a 0.25µm process, using this method and sine target direct measurements

Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation

In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to imaging

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology

An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy. The differences between these 14 designs allow us to separately estimate the effect of ionizing radiation on microlenses, on low- and zero-threshold-voltage MOSFETs and on several pixel layouts using P+ guard-rings and edgeless transistors. After irradiation, wavelength dependent responsivity drops are observed. All the sensors exhibit a large dark current increase attributed to the shallow trench isolation that surrounds the photodiodes. Saturation voltage rises and readout chain gain variations are also reported. Finally, the radiation hardening perspectives resulting from this paper are discussed

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flu

CMOS pixels crosstalk mapping and Modulation Transfer Function

The complex geometry of CMOS pixels and specific crosstalk behavior yield to difficulties in modeling the 2D MTF, required for image deconvolution process, from two 1D MTF. So, additional analysis and measurements at different wavelengths are required in order to get a better knowledge of pixel organization impact on crosstalk and MTF. A reduced size test chip has been developed using a 0.35µm CMOS optimized technology to evaluate these parameters at the same time by using on-chip metal patterns

Dynamic range optimisation of CMOS image sensors dedicated to space applications

Nowadays, CMOS image sensors are widely considered for space applications. Their performances have been significantly enhanced with the use of CIS (CMOS Image Sensor) processes in term of dark current, quantum efficiency and conversion gain. Dynamic Range (DR) remains an important parameter for a lot of applications. Most of the dynamic range limitation of CMOS image sensors comes from the pixel. During work performed in collaboration with EADS Astrium, SUPAERO/CIMI laboratory has studied different ways to improve dynamic range and test structures have been developed to perform analysis and characterisation. A first way to improve dynamic range will be described, consisting in improving the voltage swing at the pixel output. Test vehicles and process modifications made to improve voltage swing will be depicted. We have demonstrated a voltage swing improvement more than 30%. A second way to improve dynamic range is to reduce readout noise A new readout architecture has been developed to perform a correlated double sampling readout. Strong readout noise reduction will be demonstrated by measurements performed on our test vehicle. A third way to improve dynamic range is to control conversion gain value. Indeed, in 3 TMOS pixel structure, dynamic range is related to conversion gain through reset noise which is dependant of photodiode capacitance. Decrease and increase of conversion gain have been performed with different design techniques. A good control of the conversion gain will be demonstrated with variation in the range of 0.05 to 3 of initial conversion gain

Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode